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3D TCAD simulator for GaN substrate LEDs

LED 3D analysis tool in a process/device simulation integrated environment (TCAD)

This introduces the analysis of multi-quantum well (MQW) structure LEDs using TCAD, which integrates the process simulator (CSuprem) and the device simulator (APSYS). It simulates potential, current density, temperature, and carrier distribution, displaying the results in 3D. The LayerBuilder (standard included), which has a GUI interface, is used to set the device cross-sectional structure. Layout patterns such as electrodes are created using MaskEditor (standard included), which supports GDS format. Based on this information, a 3D mesh and doping profile are generated with CSuprem. The device simulator (APSYS) simulates electrical characteristics (such as IQE) and thermal properties. Additionally, using the optional feature Optowizard, light extraction via ray tracing or FDTD is possible.